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有源晶振是一款自身帶有電源電壓功能的石英晶體振蕩器,并且有多種電壓供選擇,比如有1.8V,2.5V,3.3V,3.8V,5V等高速自動安裝和高溫回流焊設計,Optionable待機輸出三態(tài)輸出功能,電源電壓范圍：1.8V~5 V,高穩(wěn)定性,低抖動,低功耗,主要應用領域:無線通訊,高端智能手機,平板筆記本WLAN,藍牙,數(shù)碼相機,DSL和其他IT產品的晶振應用,三態(tài)功能,PC和LCDM等高端數(shù)碼領域,符合RoHS/無鉛.
頻率：156.25MHZ
尺寸：7.0×5.0mm
Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封裝振蕩器,美國Silicon晶振,歐美有源晶振,六腳有源晶振,156.25MHZ晶體振蕩器,Si514晶振,7050mm振蕩器,XO振蕩器,OSC晶振,有源晶體振蕩器,尺寸7050mm,頻率156.25MHZ,電壓2.5V,低電壓晶振,低功耗晶振,低相位晶振,數(shù)據通信晶振,工業(yè)自動化晶振,測試設備晶振,數(shù)字設備晶振,通信模塊晶振,物聯(lián)網晶振.
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Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封裝振蕩器特點:
可編程到任何頻率從100kHz到250MHz
00.026 ppb頻率調諧決議
OOE上的閃光抑制，電源on和頻率轉換
低抖動操作，2到4周的交付周期,總體穩(wěn)定性包括10年變老
綜合生產試驗，覆蓋范圍包括晶體ESR和DLD
用于電源的片上LDO噪聲濾波
3.3、2.5或1.8 V操作，差分（LVPECL、LVDS、HCSL）或CMOS輸出選項
可選集成1:2 CMOS扇出緩存有源晶振
行業(yè)標準5x7、3.2x5和2.5x3.2 mm包裝,–40至85℃操作
Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封裝振蕩器 參數(shù)表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | ||||||||
| Supply Voltage | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | ||||||||||
| Supply Current | IDD |
CMOS, 100 MHz, single-ended |
— | 21 | 26 | mA | ||||||||
|
LVDS (output enabled) |
— | 19 | 23 | mA | ||||||||||
|
LVPECL (output enabled) |
— | 39 | 43 | mA | ||||||||||
|
HCSL (output enabled) |
— | 41 | 44 | mA | ||||||||||
|
Tristate (output disabled) |
— | — | 18 | mA | ||||||||||
| Operating Temperature | TA | –40 | — | 85 | oC | |||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | ||||||||
| SDA, SCL Input Voltage High | VIH | 0.80 x V DD | — | — | V | |||||||||
| SDA, SCL Input Voltage Low | VIL | — | — | 0.20 x V DD | V | |||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | ||||||||
|
Programmable Frequency Range |
FO | CMOS, Dual CMOS | 0.1 | — | 212.5 | MHz | ||||||||
| FO | LVDS/LVPECL/HCSL | 0.1 | — | 250 | MHz | |||||||||
|
Frequency Reprogramming Resolution |
M RES | — | 0.026 | — | ppb | |||||||||
|
Frequency Range for Small Frequency Change (Continuous Glitchless Output) |
From center frequency | –1000 | — | +1000 | ppm | |||||||||
|
Settling time for Small Frequency Change |
<±1000 ppm from center frequency |
— | — | 100 | µs | |||||||||
|
Settling time for Large Frequency Change (Out- put Squelched during Fre- quency Transition) |
>±1000 ppm from center frequency |
— | — | 10 | ms | |||||||||
| Total Stability* | Frequency Stability Grade C | –30 | — | +30 | ppm | |||||||||
| Frequency Stability Grade B | –50 | — | +50 | ppm | ||||||||||
| Frequency Stability Grade A | –100 | — | +100 | ppm | ||||||||||
| Temperature Stability | Frequency Stability Grade C | –20 | — | +20 | ppm | |||||||||
| Frequency Stability Grade B | –25 | — | +25 | ppm | ||||||||||
| Frequency Stability Grade A | –50 | — | +50 | ppm | ||||||||||
| Startup Time | TSU |
Minimum V DD until output frequency (FO) within specification |
— | — | 10 | ms | ||||||||
| Disable Time | TD | FO< 10 MHz | — | — | 40 | µs | ||||||||
| FO> 10 MHz | — | — | 5 | µs | ||||||||||
| Enable Time | TE | FO< 10 MHz | — | — | 60 | µs | ||||||||
| FO> 10 MHz | — | — | 20 | µs | ||||||||||
Si514,514GBB000118AAG,156.25MHZ,7050mm,Silicon小封裝振蕩器 尺寸圖
| 原廠代碼 | 品牌 | 型號 | 頻率 | 電壓 | 頻率穩(wěn)定度 |
| 530AC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530EC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530AC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530FC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530BC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530FC50M0000DG | Silicon振蕩器 | Si530 | 50MHz | 2.5V | ±7ppm |
| 530AA156M250DG | Silicon振蕩器 | Si530 | 156.25MHz | 3.3V | ±50ppm |
| 530FB100M000DG | Silicon振蕩器 | Si530 | 100MHz | 2.5V | ±20ppm |
| 530BC125M000DG | Silicon振蕩器 | Si530 | 125MHz | 3.3V | ±7ppm |
| 530EC125M000DG | Silicon振蕩器 | Si530 | 125MHz | 2.5V | ±7ppm |
| 591BB300M000DG | Silicon振蕩器 | Si591 | 300MHz | 3.3V | ±25ppm |
| 530CA28M6000DG | Silicon振蕩器 | Si530 | 28.6MHz | 3.3V | ±50ppm |
| 530AC125M000DGR | Silicon振蕩器 | Si530 | 125MHz | 3.3V | ±7ppm |
| 530BC125M000DGR | Silicon振蕩器 | Si530 | 125MHz | 3.3V | ±7ppm |
| 530EC125M000DGR | Silicon振蕩器 | Si530 | 125MHz | 2.5V | ±7ppm |
| 530AC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 3.3V | ±7ppm |
| 530BC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 3.3V | ±7ppm |
| 530EC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 2.5V | ±7ppm |
| 530FC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 2.5V | ±7ppm |
| 530BC25M0000DGR | Silicon振蕩器 | Si530 | 25MHz | 3.3V | ±7ppm |
| 514GBB000118AAG | Silicon振蕩器 | Si514 | 156.25MHz | 2.5V | ±25ppm |
| 530RB150M000DG | Silicon振蕩器 | Si530 | 150MHz | 2.5V | ±20ppm |
| 530RB200M000DG | Silicon振蕩器 | Si530 | 200MHz | 2.5V | ±20ppm |
| 530BC100M000DG | Silicon振蕩器 | Si530 | 100MHz | 3.3V | ±20ppm |
| 530AC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 3.3V | ±7ppm |
| 530AC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 3.3V | ±7ppm |
| 530BC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 3.3V | ±7ppm |
| 530BC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 3.3V | ±7ppm |
| 530EC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 2.5V | ±7ppm |
| 530EC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 2.5V | ±7ppm |
| 530FC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 2.5V | ±7ppm |
| 530FC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 2.5V | ±7ppm |
| 530AC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 3.3V | ±7ppm |
| 530BC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 3.3V | ±7ppm |
| 530EC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 2.5V | ±7ppm |
| 530FC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 2.5V | ±7ppm |
| 530AC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 3.3V | ±7ppm |
| 530AC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 3.3V | ±7ppm |
| 530AC200M000DGR | Silicon振蕩器 | Si530 | 200MHz | 3.3V | ±7ppm |
| 530BC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 3.3V | ±7ppm |
| 530BC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 3.3V | ±7ppm |
| 530BC200M000DGR | Silicon振蕩器 | Si530 | 200MHz | 3.3V | ±7ppm |
| 530EC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 2.5V | ±7ppm |
| 530EC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 2.5V | ±7ppm |
| 530EC200M000DGR | Silicon振蕩器 | Si530 | 200MHz | 2.5V | ±7ppm |
| 530FC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 2.5V | ±7ppm |
| 530FC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 2.5V | ±7ppm |
| 530BC130M250DG | Silicon振蕩器 | Si530 | 130.25MHz | 3.3V | ±7ppm |
| 530BC154M000DG | Silicon振蕩器 | Si530 | 154MHz | 3.3V | ±7ppm |
| 530AC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530BC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530EC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 2.5V | ±7ppm |
| 530FC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 2.5V | ±7ppm |
| 530AC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530AC311M040DGR | Silicon晶振 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 530AC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 530BC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530BC311M040DGR | Silicon振蕩器 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 530BC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 530EC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530EC311M040DGR | Silicon振蕩器 | Si530 | 311.04MHz | 2.5V | ±7ppm |
| 530EC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 2.5V | ±7ppm |
| 530FC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530FC311M040DGR | Silicon振蕩器 | Si530 | 311.04MHz | 2.5V | ±7ppm |
| 530FC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 2.5V | ±7ppm |
| 530CA40M0000BG | Silicon振蕩器 | Si530 | 40MHz | 3.3V | ±50ppm |
CMOS,FCD-Tech移動設備晶振,SX5CB-15F00E-32MHz,5032mm,32MHZ振蕩器,FCD-Tech水晶振蕩子,四腳有源晶振,OSC貼片晶振,5032mm有源晶振,石英有源振蕩器,32MHZ石英晶體振蕩器,時鐘晶體振蕩器,尺寸5.0x3.2mm,頻率32MHZ,輸出CMOS,低電壓晶振,低損耗晶振,低抖動晶振,無線局域網晶振,移動設備晶振,便攜式設備晶振,數(shù)字音頻晶振.
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電話：+86-0755-278383514
手機：138-2330-0879
QQ：632862232
地址：廣東深圳市寶安寶安大道東95號浙商銀行大廈1905
康華爾微信
